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APTM120U10DAG
Single switch with Series diodes MOSFET Power Module
SK S D
VDSS = 1200V RDSon = 100m typ @ Tj = 25C ID = 116A @ Tc = 25C
Application * Zero Current Switching resonant mode Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration * AlN substrate for improved thermal performance Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant
G
DK
S
D
SK G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM120U100DAG Rev 1
July, 2006
Max ratings 1200 116 86 464 30 120 3290 24 50 3200
Unit V A V m W A
APTM120U10DAG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25C T j = 125C
Typ
VGS = 10V, ID = 58A VGS = VDS, ID = 20mA VGS = 30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 116A Inductive switching @ 125C VGS = 15V VBus = 800V ID = 116A R G =1.2 Inductive switching @ 25C VGS = 15V, VBus = 800V ID = 116A, R G = 1.2 Inductive switching @ 125C VGS = 15V, VBus = 800V ID = 116A, R G = 1.2
100 3
Max 1 3 120 5 400 Max
Unit mA m V nA Unit nF
Dynamic Characteristics
Min
Typ 28.9 4.4 0.8 1100 128 716 20 17 245 62 5 4.6 9.2 5.6
nC
ns
mJ
mJ
Series diode ratings and characteristics
Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRM IF VF
Test Conditions VR=1200V IF = 180A IF = 360A IF = 180A IF = 180A VR = 800V di/dt = 800A/s Tj = 25C Tj = 125C
T c = 70C
Min 1200
Typ
Max 1500 2500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
180 2 2.3 1.8 370 500 3.9 20.7
2.5 V
Qrr
Reverse Recovery Charge
C
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APTM120U100DAG Rev 1
July, 2006
trr
Reverse Recovery Time
ns
APTM120U10DAG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Series diode 2500 -40 -40 -40 3 2 Min Typ Max 0.038 0.22 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTM120U100DAG Rev 1
July, 2006
APTM120U10DAG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.04 Thermal Impedance (C/W) 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.5 0.3 0.9 0.7
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 280 I D, Drain Current (A) ID, Drain Current (A) 240 200 160 120 80 40 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS =10V @ 58A 4.5V 6V 5.5V VGS =15, 10V 7V
Transfert Characteristics 320 280 240 200 160 120 80 40 0 0 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 120 100 80 60 40 20 0 30
TJ=125C T J=-55C T J=25C
VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
5V
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
VGS=10V V GS=20V
40
80
120
160
200
240
25
50
75
100
125
150
July, 2006 4-6 APTM120U100DAG Rev 1
ID, Drain Current (A)
TC, Case Temperature (C)
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APTM120U10DAG
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 Ciss C, Capacitance (pF) 10000 14 12 10 8 6 4 2 0 0 300 600 900 1200 1500 Gate Charge (nC)
July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=58A
1000
limited by RDS on
100s
100
1ms 10ms
10
Single pulse TJ=150C TC=25C 1
1 1200 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage ID=116A TJ=25C
VDS=600V V DS=960V V DS=240V
Coss
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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APTM120U100DAG Rev 1
APTM120U10DAG
Delay Times vs Current 300 td(on) and td(off) (ns) 250 200 150 100 50 0 30 60 90 120 150 180 I D, Drain Current (A) Switching Energy vs Current 16 24
V DS =800V RG =1.2 T J=125C L=100H V DS=800V RG=1.2 T J=125C L=100H
Rise and Fall times vs Current 100 t d(off) 80
VDS=800V RG=1.2 TJ=125C L=100H
tf
tr and tf (ns)
60 40 20 0 30 60 90 120 150 I D, Drain Current (A) 180 tr
td(on)
Switching Energy vs Gate Resistance
V DS=800V ID=116A T J=125C L=100H
Switching Energy (mJ)
Switching Energy (mJ)
12 8 4 0 30
Eon Eoff
20 16 12 8 4
Eoff
Eon Eoff 0 2 4 6 8
60 90 120 150 ID, Drain Current (A)
180
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage
Operating Frequency vs Drain Current 150
VDS=800V D=50% RG=1.2 T J=125C T C=75C
ZCS Hard switching
IDR, Reverse Drain Current (A)
175
1000
Frequency (kHz)
125 100 75 50 25 0 30
100
T J=150C T J=25C
10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2006
50 70 90 ID, Drain Current (A)
110
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM120U100DAG Rev 1

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